PART |
Description |
Maker |
IRL3103D2 |
FETKY?/a> MOSFET & SCHOTTKY RECTIFIER(Vdss=30V, Rds(on)=0.014ohm, Id=54A) FETKY MOSFET & SCHOTTKY RECTIFIER(Vdss=30V, Rds(on)=0.014ohm, Id=54A) FETKY⑩ MOSFET & SCHOTTKY RECTIFIER(Vdss=30V, Rds(on)=0.014ohm, Id=54A)
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IRF[International Rectifier]
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IRF7807VD1 IRF7807VD1TR |
Co-Pack N-channel HEXFET Power MOSFET and Schottky Diode 30V FETKY - MOSFET and Schottky Diode in a SO-8 package
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International Rectifier
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FDFMA2N028Z08 FDFMA2N028Z |
20V Integrated N-Channel PowerTrenchMOSFET and Schottky Diode Integrated N-Channel PowerTrench㈢ MOSFET and Schottky Diode 20V, 3.7A, 68mヘ Integrated N-Channel PowerTrench庐 MOSFET and Schottky Diode 20V, 3.7A, 68m惟 Integrated N-Channel PowerTrench? MOSFET and Schottky Diode 20V, 3.7A, 68mΩ
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Fairchild Semiconductor
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IRF3704 IRF3704L IRF3704S IRF3704STRL IRF3704STRR |
20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 20V Single N-Channel HEXFET Power MOSFET in a TO-262 package 20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A? Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A) Power MOSFET(Vdss=20V Rds(on)max=9.0mohm Id=77A) Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A?) Power MOSFET(Vdss=20V/ Rds(on)max=9.0mohm/ Id=77A) CONNECTOR, PICOFLEX, 4WAY; Connector type:Wire-to-Board; Ways, No. of:4; Termination method:Crimp; Rows, No. of:2; Pitch:1.27mm; Series:91935 RoHS Compliant: Yes 功率MOSFET(减振钢板基本\u003d 20V的,的Rds(on)最大值\u003d 9.0mohm,身份证\u003d 77A条? TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 77A I(D) | TO-263AB
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IRF[International Rectifier] International Rectifier, Corp.
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IRL3803L IRL3803S |
Power MOSFET(Vdss=30V, Rds(on)=0.006ohm, Id=140A 功率MOSFET(减振钢板基本\u003d 30V的,的Rds(on)\u003d 0.006ohm,身份证\u003d律目140A?) Power MOSFET(Vdss=30V, Rds(on)=0.006ohm, Id=140A?) POWER MOSFET(VDSS=30V, RDS(ON)=0.006OHM, ID=140Aㄌ) Power MOSFET(Vdss=30V, Rds(on)=0.006ohm, Id=140A) Power MOSFET(Vdss=30V, Rds(on)=0.006ohm, Id=140A?
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International Rectifier, Corp. IRF[International Rectifier]
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NTLUF4189NZ NTLUF4189NZTAG NTLUF4189NZTBG |
Power MOSFET and Schottky Diode 30 V, N−Channel with 0.5 A Schottky Barrier Diode, 1.6 x 1.6 x 0.55 mm Cool Package
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ON Semiconductor
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IRF3709 IRF3709L IRF3709S IRF370B9L IRF370B9S F370 |
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A? Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A 功率MOSFET(减振钢板基本\u003d 30V的,的Rds(on)最大值\u003d 9.0mohm,身份证\u003d 90A型? Power MOSFET(Vdss=30V/ Rds(on)max=9.0mohm/ Id=90A) Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A) Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A?) Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A??
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International Rectifier, Corp. IRF[International Rectifier]
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IRF840S IRF840STRR IRF840STRL |
500V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss=500V Rds(on)=0.85ohm Id=8.0A) Power MOSFET(Vdss=500V/ Rds(on)=0.85ohm/ Id=8.0A) Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A) 功率MOSFET(减振钢板基本\u003d 500V及的Rds(on)\u003d 0.85ohm,身份证\u003d 8.0A
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IRF[International Rectifier] International Rectifier, Corp.
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IRFR2905ZPBF IRFU2905ZPBF |
HEXFET? Power MOSFET ( VDSS = 55V , RDS(on) = 14.5mΩ , ID = 42A ) HEXFET垄莽 Power MOSFET ( VDSS = 55V , RDS(on) = 14.5m楼? , ID = 42A ) HEXFET㈢ Power MOSFET ( VDSS = 55V , RDS(on) = 14.5mヘ , ID = 42A )
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International Rectifier
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IRFZ44VZLPBF IRFZ44VZSPBF IRFZ44VZPBF |
HEXFET㈢ Power MOSFET ( VDSS = 60V , RDS(on) = 12mヘ , ID = 57A ) HEXFET? Power MOSFET ( VDSS = 60V , RDS(on) = 12mΩ , ID = 57A ) HEXFET垄莽 Power MOSFET ( VDSS = 60V , RDS(on) = 12m楼? , ID = 57A )
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International Rectifier
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IRF5802 IRF5802TR |
150V Single N-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package Power MOSFET(Vdss=150V, Id=0.9A) Power MOSFET(Vdss=150V/ Id=0.9A) 0.9 A, 150 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET
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IRF[International Rectifier]
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